Metallic nanolayers for semiconductor sensor and detector structures

Sponsor: Czech Science Foundation

Principal investigator: Olga Procházková, Ph.D.

Co-principal investigator: Ing. Kateřina Piksová

Members: Jan Grym, Ph.D.; Pavel Kacerovský, Ph.D.; Jan Lorinčík, Ph.D.; Fedor Šrobár, DSc.; Roman Yatskiv, Ph.D.; Jiří Zavadil, Ph.D.

From: 2009-01-01

To: 2011-12-31

The aim of the project is preparation and study of nanosystems with focus on metal nanoparticles-semiconductor interfaces which find application in gas sensor and ionizing radiation detector structures. Realization of optimized metal-semiconductor interface with the Fermi level not pinned at the surface levels (a prerequisite for good device performance) will employ low-energy deposition of metal (Pt, Pd) and rare earth (Pr, Dy, Yb) nanoparticles on InP and InP structure with p-n junction. Metallic nanolayers deposited on planar and nanoporous InP surfaces will be investigated and ways will be explored to boost their gas and ionizing radiation detection capability. Liquid encapsulation Czochralsky procedure will be used to prepare monocrystalline InP, LPE to produce InP epilayers, electrochemical procedure to create nonporous in InP, method of micelle colloid solutions of metallic nanoparticles and electrophoresis from colloid solutions for nanolayer deposition. The unique properties of nanoparticles and nanostructures will be monitored by means of the SEM, TEM, AFM, SIMS techniques, low-temperature PL, optical absorption and reflectance, DLTS and Hall effect measurements, as well as by I-V and C-V characteristics.





IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

Contact us

Data box: m54nucy

IČ: 67985882
DIČ: CZ67985882