RNDr. Jiří Zavadil, PhD
Graduated from Faculty
of Mathematics and Physics, Charles University, Prague (1967)
RNDr in Theoretical
Physics, Charles University, Prague (1972)
PhD in Physics,
Institute of Physics, Czechoslovac Academy of Sciences, Prague (1973)
He has long experience in the calculation of
electronic structure of solid surfaces and strongly localised defects in III-V
semiconductors. Since 1993 he has been involved in the optical characterisation
of semiconductor and glass materials and structures for optoelectronics, by
means of electro and photoluminescence spectroscopy. In
recent years he has been working both theoretically and experimentally in the
research of electroluminescent spectra of InGaAsP/InP
structures and diodes and in the modeling of their waveguiding
properties. His major interest now is the study of luminescent properties of InP based semiconductor and chalcogenide glass materials doped with rare-earth elements
and characterization of related structures and nanostructures.
Currently coordinated projects.
Special
glass materials for photonics applications (GA104/08/0734)
2008 – 2010
The project is concerned with the preparation and
characterization of special glass systems, those doped with selected rare-earth
(RE) elements and with drawing of optical fibres that effectively transmit or
emit radiation in the infrared spectral range. The following subjects will be
pursued: (1) Development of novel methods for synthesis and purification of chalcogenide and heavy metal oxide (HMO) systems to obtain
high quality rods and performs; (2) Preparation and investigation of new
vitreous HMO systems based on Sb2O3 or Bi2O3 and chalcogenide
glasses with higher contents of Te as compared to systems (e.g.
Ge20Se(80-x)Tex) previously studied in our laboratory; (3) Finding of suitable
RE dopant - glass matrix combinations in view of
photonics applications; (4) Fibre drawing technology and fibre
characterization; (5) An attempt will also be done to develop approaches for
the preparation of capillary and microstructure fibres from the prepared
materials.
Investigation of Lead Iodide
for X-ray Detection (GC104/08/J025)
2008 – 2010
The aim of the proposed project is the preparation of
PbI2 single crystals and optimization of their structural, electrical and
optical properties in view of efficient detection of rtg
radiation at room and elevated temperature up to
Nanostructures of Controlled
Size and Dimensions (KAN401220801)
2008 – 2012
The project proposes to concentrate on detailed study
(modelling and experimental realization) of nanostructures, with target
controlled dimensions from several nm and especially controlled organization on
dimensions of tens to hundreds nm. The method of nanosphere
lithography will be utilized, in combination with other methods as ion
implantation, sputtering and deposition, electrolytic methods, iontophoresis, and sedimentation. The goal will be the
preparation of both metallic (eg.Pd, Ni,Ag,Au), semiconducting (eg. Si,CdS,oxids-Fe,Zn),
and possibly also dielectric nanostructures. Regulation of nanoparticle
dimensions will be resolved using organic layers, micelar
systems, growth stabilizers and chemical ablation. To characterize the
nanostructures of interest, a wide range of methods will be used, including
HRTEM, SEM, AFM, STM, etc. Given structures will be studied in various optical
and optoelectronic applications, in connection with both passive and active
structures.
List of selected recent publications.
D. Ležal, J. Zavadil and M. Procházka: Sulfide, selenide and telluride glassy systems for optoelectronic
applications, Journal of Optoelectronics and Advanced Materials 7 (5) (2005) 2281-2292.
K. Zdansky, J. Zavadil, L. Pekarek, V. Gorodynsklyy and H. Kozak: Investigation
of copper doped InP single crystals grown by Czochralski technique for use in X-ray detection, phys.
stat. sol (a) 202 (2005) 555-560.
J. Zavadil, O. Procházková and P. Gladkov: Optical
properties of InP layers
prepared with the addition of Ce, Tm and Lu in the
growth melt, Cryst. Res. Technol. 40 (2005) 498-502.
L. Horák, J. Zavadil, V. Ducháč,
S. Javorský, F. Kostka, A. Švec and D. Ležal: Autofluorescence spectroscopy of colorectal carcinoma-ex
vivo study, Journal of Optoelectronics and Advanced Materials, 8(1) (2006) 396-400.
J. Zavadil, O. Prochazkova, K. Zdansky and P. Gladkov: Ce and Yb doped InP layers grown for radiation detection, phys stat sol (c) 4 (2007) 1444-1447
J. Pedlíková, J. Zavadil, O. Procházková and D. Ležal: Special
glasses for IR applications, Journal of Optoelectronics and Advanced
Materials 9 (2007) 1679-1682.
K. Žďánský, P. Kacerovský,
J. Zavadil, J. Lorinčík and A. Fojtík:
Layers of Metal Nanoparticles
on Semiconductors Deposited by Electrophoresis from Solutions with Reverse
Micelles, Nanoscale Res. Letters 2 (2007) 450-454.
J. Zavadil, O. Procházková, K. Žďánský, P. Gladkov: Ce
and Yb doped InP layers grown for radiation detection, phys. stat. sol. (c) 4 (2007) 1444-1447.
J. Zavadil, O. Procházková, K. Žďánský, P. Gladkov: InP p-type
epitaxial layers grown with the addition of rare-earth elements for use in
radiation detection, J. Optoelectronics & Advanced Mat. 9 (2007) 1221-1226.
Kaluzny J,
Pedlikova J, Zavadil J, et al.: Changes of sulphide glasses caused by the
presence of As, Journal of Optoelectronics and Advanced Materials 9 (2007) 3076-3078.
Kubliha M, Kaluzny J, Pedlikova J, et al: Electrical and dielectrical properties of
As-Se-Teglasses, , Journal of Optoelectronics and Advanced Materials 9 (2007) 3082-3087.
O. Procházková, J. Grym, L. Pekárek, J. Zavadil, K. Žďánský: InP based semiconductor structures
for radiation detection,
J. Mater Sci: Mater Electron 19
(2008) 770-775.
O. Procházková, J. Grym, J. Zavadil, J. Lorinčík, K. Žďánský: Influence of Yb and Yb2O3 addition on the properties of InP layers, J. of Optoelectronics and Advanced Materials 10 (2008) 3261-3264.
J. Zavadil, J. Pedlikova, K. Zdansky, R. Yatskiv, P. Kostka, D. Lezal: Preparation and characterization of telluride glasses, Journal of Non-Cryst. Solids 354 (2008) 486-491.
M. Matuchova, K. Zdansky,
J. Zavadil, A. Danilewsky, J. Maixner, D. Alexiew: Electrical, optical and structural
properties of lead iodide, JOURNAL
OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 20 (2008) 289-294.
M. Matuchova, K. Zdansky,
J. Zavadil: Lead iodide crystals prepared
under stochiometric and nonstochiometric
conditions, Materials
Science and Engineering B, 165,
(2009) 60-63
M. Matuchova, K. Zdansky, J.
Zavadil., A. Danilewsky, F. Riesz.,
M.A.S. Hassan, D. Alexiev, R. Kral: Study
of the influence of the rare-earth elements on the properties of lead jodide, J. of Crystal Growth 311 (2009) 3557-3562.
J. Grym, O. Procházková,
J. Zavadil, K. Žďánský: LPE growth of InP layers from rare-earth melts
for radiation detector structures, Materials Science and Engineering B 165 (2009) 94-97.
J. Zavadil, P. Kostka, J. Pedlíková, K. Žďánský, M. Kubliha, V. Labaš, J.
Kalužný: Electro-optical characterization
of Ge-Se-Te glasses, J Non-Cryst Solids 355 (2009) 2083-2087.
J. Kalužný, J. Pedlíková, J. Zavadil, V. Labaš, M. Kubliha, P. Kostka: Electrical methods for optimization of
structural changes and defects in sulphide glasses, J Optoelectronics &
Adv. Materials 11 (2009) 2053-2057.
J. Kalužný, J. Pedlíková, P. Kostka, V. Labaš, , M. Kubliha, J. Zavadil, S.
Minarik: Investigation
of electrical and dielectric properties of Ge20Se80-xTex
glasses doped by Er, Ho, Pr, J Optoelectronics & Adv. Materials 11 (2009) 2063-2068.
K. Žďánský, J. Zavadil, P. Kacerovský,
F. Kostka, and A. Fojtík: Electrophoretic
deposition of reverse micelle metal nanoparticles, phys. stat. sol. (c) 6, No. 12 (2009) 2722-2724.
K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, J. Vanis, F. Kostka, O. Cernohorsky, A. Fojtik, J. Reboun, J. Cermak: Electrophoresis deposition of metal nanoparticles with reverse micelles onto InP, Int. J. Mat. Res. (formerly Z. Metallkd.) 100, No. 9 (2009) 1234-1238.
M. Matuchova, K. Zdansky,
J. Zavadil et al.: Study of the influence of the rare-earth elements on the properties
of lead iodide, Journal of Crystal Growth 311 (2009) 3557-3562.