The project is focused to the industrial research of a novel technology of high-power semiconductor components. This technology belongs to the key enabling technologies (KETs). The most of semiconductor components are based on PN junction. PN junction is created by doping of selected chemical elements, usually phosphorus or boron, into a silicon substrate. Liquid diffusion sources are usually used in modern industrial technology. This technology doesn’t allow achieving the higher yield than 75 % of the theoretical yield. The reason lies in low homogeneity of prepared films which- together with the distribution of components on the silica substrate- reduces the yield of at least about 25 %. The replacement of liquid diffusion sources by solutions contain nanoparticles, so called colloidal solutions, can eliminate this disadvantage. The main goal of the project is the research of colloidal diffusion sources of phosphorus and boron and their application in the industrial technology of high-power semiconductor devices, especially the rectifier diodes. Developed colloidal diffusion sources will be applied in the current production technology and they will replace currently used liquid diffusion sources. The project combines the know-how of the Institute of Photonics and electronics in the field of inorganic nanomaterials with the production technology of high-power semiconductor components of the company ABB, s.r.o. The results of the joint research will be put into the production and the elaborated colloidal sources will be immediately used in the production technology of ABB, s.r.o. The use of colloidal diffuse sources will reduce the energy consumption of the production and it will contribute to increasing the efficiency of the exploitation of materials that are necessary for final production.
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