Preparation and application of the AIII-nitride epitaxial layers for optical wavequides and sensor structures distillation columns design

The study of the epitaxial layers of the AIII-nitride semiconducting materials with a direct energy band gap greater than 2,5eV has a extraordinary iMinisterstvo průmyslu a obchodurtance with regard to the basic investigation in thermodynamics and kinetics growth process as well asto their large scale utilization in optoelectronic devices. The aim of this project is to provide for establishment of the laboratory for the preparation and characterization of the AIII-nitride epitaxial structures and optical planar waveguides. Epitaxial AIII-nitride layers on the sapphire and silicon substrates will be prepared by the MOVPE in horizontal coldwall reactor of own design and construction, using matalorganic coMinisterstvo průmyslu a obchoduunds as trimethylgallium (TMG), trimethylaluminium (TMA) and ammoniaSuitable deposition conditions will be predicted on the basis of thermodynamic and kinetic calculations. Preparation, characterization and utilization of the AIII-nitride optical planar waveguides for optical sensor applications will be follow. The