III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications

Sponsor: Ministry of Education, Youth and Sports of the Czech Republic

Principal investigator: Jan Grym, Ph.D.

Members: Ondřej Černohorský, MSc.; Jan Lorinčík, Ph.D.; Jan Mrázek, Ph.D.; Jan Vaniš, Ph.D.; Roman Yatskiv, Ph.D.

From: 2012-01-01

To: 2013-12-31

The project aims at the atomic scale profound understanding and tailoring of growth mechanisms, microstructure and physical properties of highly mismatched III-V heterostructures, quantum dot (QD) nanostructures and metal nanoparticles (MNPs) grown on nanoporous and compact substrates. Periodic porous structures in InP and GaAs will be prepared by electrochemical etching and In(x)Ga(1-x)As(y)P(1-y) layers and InAs/GaAs QDs will be grown by liquid and metal organic vapour phase epitaxy. Schottky barriers will be formed by MNPs deposition onto InP by electrophoresis and by photoinduced decomposition of inorganic salts. Quantitative transmission electron microscopy will be used to study the nucleation mechanisms the microstructure of the epilayers, the shape and size of QDs and MNPs the local interfacial structure and the strain distribution at the heterointerfaces. Physical properties will be characterized by ballistic electron emission spectroscopy, photoluminescence and microcathodoluminescence.




IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

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Data box: m54nucy

IČ: 67985882
DIČ: CZ67985882