Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications

Sponsor: Ministry of Education Youth and Sports; Ukrainian-Czech Scientific Cooperation Project

Principal co-investigator: Roman Yatskiv, Ph.D.

Members: Jan Grym, Ph.D.Stanislav Tiagulskyi, Ph.D.Šárka Kučerová, MSc., Hana Faitová, MSc.

From: 2021-01-01

To: 2022-12-31

We suggest innovative ideas for the modification/optimization of optoelectronic properties of optically transparent conductive ZnO layers. First, it is suggested to improve conductivity of ZnO films using recently discovered plasma-chemical activity and high doping efficiency of methane molecules at RF-magnetron sputtering deposition of ZnO thin films. In frame of this innovation,  a detailed investigation of plasma-chemical effect of methane on structural, morphological, and optoelectronic properties of ZnO thin films deposited by magnetron sputtering will be performed. Second, antireflection layer of aligned ZnO nanorods will be hydrothermally grown on the top of highly doped n+-ZnO films to reduce optical reflection in visible and near infrared spectral range. As a result, a new type of optically transparent conductive window in the form of n+-ZnO thin film with antireflection layer of ZnO nanorods for solar cells will be fabricated and studied.

IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

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