Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors

Sponsor: Ministry of Education, Youth and Sports of the Czech Republic

Primary investigator: Jan Grym, Ph.D.

Members: Ondřej Černohorský, MSc.; Jan Lorinčík, Ph.D.; Jan Mrázek, Ph.D.; Jan Vaniš, Ph.D.; Roman Yatskiv, Ph.D.

From: 2012-01-01

To: 2013-11-30

The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advanced characterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure.







IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

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IČ: 67985882
DIČ: CZ67985882