Study of charge transport mechanisms in graphene-semiconductor junctions

Sponsor: Czech Science Foundation

Principal investigator: Roman Yatskiv, Ph.D.

Members: Jan Grym, Ph.D., Stanislav Tiagulskyi, Ph.D., Ondřej Černohorský Ph.D., Mgr. Šárka Kučerová

From: 2020-01-01

To: 2022-12-31

Unique properties of graphene-semiconductor junctions offer a great opportunity to investigate new fundamental phenomena taking place at the interface between a two-dimensional (2D) semimetal and a three-dimensional (3D) bulk semiconductor, and make this junction extremely attractive for a new generation of graphene-based devices. One of the key issues in these junctions is to understand the charge transport mechanisms. We focus on a systematic analysis of charge transport mechanisms in the junctions formed by a 3D oxide semiconductor (Ga2O3 and ZnO) and 2D graphene. We further attempt to deeply understand how the interaction between graphene and different crystallographic planes of oxide semiconductors affect the charge transport. The project goals present a considerable challenge with a wide range of potential applications, particularly in photodetectors, solar cells, and radiation detectors.

IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

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IČ: 67985882
DIČ: CZ67985882