Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds

Sponsor: Ministry of Education, Youth and Sports of the Czech Republic

Principal investigator: Roman Yatskiv, Ph.D.

Members: Jan Grym, Ph.D.; Jiří Zavadil, CSc.; Karel Žďánský, CSc.; Ondřej Černohorský, MSc.; Marie Hamplová, MSc.

From: 2010-05-01

To: 2012-12-31

Experimental investigation of the preparation and characterization of metal nanolayers deposited by electrophoresis on semiconductor surfaces and of their application in gas sensors and light-emitting devices has been conducted.


  1. R. Yatskiv, J. Grym, K. Zdansky, K. Piksova:Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing, Carbon 2012; 50(10):3928–3933.
  2. K. Zdansky, R. Yatskiv: Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection, Sensors and Actuators B: Chemical 2012;169(1):104-109.
  3. R. Yatskiv, J. Grym: Temperature-dependent properties of semimetal graphite-ZnO schottky diodes, Appl. Phys. Lett. 2012;101(16):162106.

More information:


IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

Contact us

Data box: m54nucy

IČ: 67985882
DIČ: CZ67985882