Study of the optoelectronic properties of hybrid heterojunction

Sponsor: Czech Science Foundation

Principal investigator: Roman Yatskiv, Ph.D.

Members: Jan Grym, Ph.D.; Jan Vaniš, Ph.D.; Stanislav Tiagulskyi, Ph.D.; Marie Hamplová, MSc..

From: 2017-01-01

To: 2019-12-31

Unique properties of ZnO and the ease of the growth of its nanostructures make this material extremely attractive for a variety of  optoelectronic applications. To fully exploit the potential of ZnO, there is one essential problem which must be solved: the preparation of a high-quality rectifying junction. The lack of p-type electrical conductivity in ZnO emphasizes the importance of the study of hybrid  heterojunctions. One of the key issues in these heterojunctions is to understand the charge transport mechanism. Our goal is to  systematically analyze the charge transport mechanism in hybrid heterojunctions formed by a single ZnO nanorod or the array of  nanorods and p-type GaN(SiC) substrate. Project goals present a considerable challenge with a wide range of potential applications, particularly in light-emitting devices, photodetectors and solar cells.


  1. Yatskiv R, Grym J. Graphite/SiC junctions and their electrical characteristics. physica status solidi (a). DOI: 10.1002/pssa.201700143

IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

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