{"id":21749,"date":"2011-01-01T00:00:00","date_gmt":"2010-12-31T23:00:00","guid":{"rendered":"https:\/\/www.ufe.cz\/grantove-projekty\/ballistic-electron-emission-microscopy-and-spectroscopy-of-inas-quantum-dots-prepared-by-different-technologies\/"},"modified":"2025-02-10T17:24:28","modified_gmt":"2025-02-10T16:24:28","slug":"ballistic-electron-emission-microscopy-and-spectroscopy-of-inas-quantum-dots-prepared-by-different-technologies","status":"publish","type":"grantove_projekty","link":"https:\/\/www.ufe.cz\/en\/grant-projects\/ballistic-electron-emission-microscopy-and-spectroscopy-of-inas-quantum-dots-prepared-by-different-technologies\/","title":{"rendered":"Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by different technologies"},"content":{"rendered":"<p>Self assembled InAs quantum dots in GaAs embedded between GaAlAs barriers will be studied by ballistic electron emission microscopy and spectroscopy. On self assembled quantum dots with dimensionally same base, prepared by different technologies, spectroscopy characteristics will be compared. Measurements will be realized on structures grown by molecular beam epitaxy (MBE) and by metalorganic vapor phase epitaxy MOVPE.<\/p>\n","protected":false},"template":"","vyzkumne_tymy":[56],"acf":[],"_links":{"self":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/grantove_projekty\/21749"}],"collection":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/grantove_projekty"}],"about":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/types\/grantove_projekty"}],"wp:attachment":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/media?parent=21749"}],"wp:term":[{"taxonomy":"vyzkumne_tymy","embeddable":true,"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/vyzkumne_tymy?post=21749"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}