{"id":21756,"date":"2012-03-01T00:00:00","date_gmt":"2012-02-29T23:00:00","guid":{"rendered":"https:\/\/www.ufe.cz\/grantove-projekty\/role-of-the-interface-in-the-preparation-of-high-quality-schottky-barriers-on-iii-v-semiconductors\/"},"modified":"2025-02-10T17:24:30","modified_gmt":"2025-02-10T16:24:30","slug":"role-of-the-interface-in-the-preparation-of-high-quality-schottky-barriers-on-iii-v-semiconductors","status":"publish","type":"grantove_projekty","link":"https:\/\/www.ufe.cz\/en\/grant-projects\/role-of-the-interface-in-the-preparation-of-high-quality-schottky-barriers-on-iii-v-semiconductors\/","title":{"rendered":"Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors."},"content":{"rendered":"<p>The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advancedcharacterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure.<\/p>\n","protected":false},"template":"","vyzkumne_tymy":[56],"acf":[],"_links":{"self":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/grantove_projekty\/21756"}],"collection":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/grantove_projekty"}],"about":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/types\/grantove_projekty"}],"wp:attachment":[{"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/media?parent=21756"}],"wp:term":[{"taxonomy":"vyzkumne_tymy","embeddable":true,"href":"https:\/\/www.ufe.cz\/en\/wp-json\/wp\/v2\/vyzkumne_tymy?post=21756"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}