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Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by different technologies

Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by different technologies

Provider: Grantová agentura České republiky (GA ČR)
Principal recipient: Institute of Photonics and Electronics of the Czech Academy of Sciences
Investigator:
From: 1. January 2011
To: 13. April 2015
Project number:

Self assembled InAs quantum dots in GaAs embedded between GaAlAs barriers will be studied by ballistic electron emission microscopy and spectroscopy. On self assembled quantum dots with dimensionally same base, prepared by different technologies, spectroscopy characteristics will be compared. Measurements will be realized on structures grown by molecular beam epitaxy (MBE) and by metalorganic vapor phase epitaxy MOVPE.

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