Films of metal nanoparticles of Pd, Pt, Ag and Au are deposited by electrophoresis on semiconductor surfaces of III-V-N compounds. The shape and size of nanoparticles in the colloid are monitored by microscopic methods. Deposited films are characterizedmicroscopically by TEM, SEM, AFM, optically by reflection, photoluminescence and Raman spectroscopy at room temperature and at low temperatures down to liquid helium one. Suitable alterations of colloid solutions of metal nanoparticles are provided for enhancement of semiconductor photoluminescence, for rising of the photovoltage at the interface of the semiconductor and metal nanoparticles and in the case of Pd and Pt for an increase of interface sensitivity on hydrogen.
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