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Roman Yatskiv (Jackiv)

Roman Yatskiv (Jackiv), Ph.D.

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Position: Deputy team leader; Senior research scientist
Department: Synthesis and characterization of nanomaterials
+420 266 773 423
yatskiv@ufe.cz
Location: Main building of UFE, Praha 8 - Kobylisy

Research interests:

  • Photoluminescence spectroscopy of compound semiconductors
  • Electrical characterization of semiconductor materials
  • Growth and characterization of low-dimensional semiconductor structures

Education:

2007  Ph.D., Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Microelectronics, specialization: Electronics

2002  Mgr., Yuriy Fedkovych Chernivtsi National University, Faculty of Physics, Department of Electronics and Power Engineering

More information:

Orcid
Scopus
Publons

Active grant projects:

Investigator:

Co-investigator:

Photoinduced effects in glasses transmitting infrared radiation

Period: 

1. January 2025 –
31. December 2027

Member:

Closed grant projects

Investigator:

Study of charge transport mechanisms in graphene-semiconductor junctions

Period: 

1. January 2020 –
31. December 2022
Study of the optoelectronic properties of hybrid heterojunction.

Period: 

1. January 2017 –
31. December 2019
Electrophoretic deposition of nanostructured ZnO layers and their use in the detection of environmentally hazardous gases

Period: 

1. January 2014 –
30. April 2016
Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds

Period: 

1. May 2010 –
31. December 2012
Role of transition metals and rare-earth elements in preparation of InP-based materials for radiation detectors.

Period: 

1. January 2009 –
31. December 2011

Co-investigator:

Electric charge transport in heterostructures of semiconductor oxides with copper halides

Period: 

1. January 2023 –
31. December 2025
Preparation and characterisation of disordered materials for application in infrared spectra

Period: 

1. March 2020 –
31. December 2022
Glasses transmitting infrared radiation based on heavy metal oxides (2019-21)

Period: 

1. January 2019 –
30. June 2022
Special glasses for optoelectronics, non-linear optics and fiber optics

Period: 

1. January 2014 –
31. December 2015

Member:

Development of Sensors for Hydrogen and Carbon Monoxide Detection in the Energy and Automotive Industries

Period: 

1. January 2024 –
30. June 2026
Nanostructured heterojunctions for chemiresistors

Period: 

1. January 2019 –
31. December 2021
Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates

Period: 

1. January 2017 –
11. December 2020
III-V semiconductor heterostructures/nanostructures towards innovative electronic and photonic applications

Period: 

1. January 2012 –
31. December 2013
Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.

Period: 

1. March 2012 –
30. November 2013

Publications

Books:

Book chapters:

Journal papers:

A. Vasin, A. Rusavsky, D. Kysil, T. Sabov, A. Korchovyi, I. Rusetskyi, M. Danilov, R. Kozakevych, S. Tiagulskyi, R. Yatskiv, G. Kolbasov, D. Garcia, M. Smajlaj, A. Elmarakbi, A. Nazarov, "Nano/mesoporous graphitized CNx thin films grown by magnetron plasma assisted deposition as a support for electrocatalyst nanoparticles", Applied Surface Science 740, 166997 (2026) doi:https://doi.org/10.1016/j.apsusc.2026.166997
S. A. Irimiciuc, P. Pokorný, S. Chertopalov, M. Vondráček, S. Cichoň, L. Lebedová Volfová, E. Marešová, R. Yatskiv, M. Novotný, J. Lančok, "Surface stability of CuBr thin films deposited by pulsed laser deposition", Applied Surface Science 717, 164813 (2026) doi:https://doi.org/10.1016/j.apsusc.2025.164813
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