Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.

The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advancedcharacterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure.