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Roman Yatskiv (Jackiv)

Roman Yatskiv (Jackiv), Ph.D.

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Position: Deputy team leader; Senior research scientist
Department: Synthesis and characterization of nanomaterials
Location: Main building of UFE, Praha 8 - Kobylisy

Research interests:

  • Photoluminescence spectroscopy of compound semiconductors
  • Electrical characterization of semiconductor materials
  • Growth and characterization of low-dimensional semiconductor structures

Education:

2007  Ph.D., Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Microelectronics, specialization: Electronics

2002  Mgr., Yuriy Fedkovych Chernivtsi National University, Faculty of Physics, Department of Electronics and Power Engineering


More information:

Active grant projects:

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Period: 

1. January 2025 –
31. December 2027

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Closed grant projects

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Publications

Books:

Book chapters:

Journal papers:

V. Dřínek, R. Yatskiv, M. Klementová, R. Fajgar, V. Jandová, M. Koštejn, P. Mikysek, J. Grym and J. Kupčík, "Spectroscopic properties of nanostructured molybdenum oxysulfidedeposits fabricated by MoO3evaporation in H2S.", Materials Letters. 275(15 Sep), 128075 (2020) doi:10.1016/j.matlet.2020.128075
P. Nekvindová, J. Cajzl, A. Macková, P. Malinský, J. Oswald, R. Bottger and R. Yatskiv, "Er implantation into various cuts of ZnO - experimental study and DFT modelling", Journal of Alloys and Compounds. 816(3), 152455 (2020) doi:10.1016/j.jallcom.2019.152455
L. Piliai, D. Tomeček, M. Hruška, I. Khalakhan, J. Nováková, P. Fitl, R. Yatskiv, J. Grym, M. Vorokhta, I. Matolínová and M. Vrňata, "New Insights towards High-Temperature Ethanol-Sensing Mechanism of ZnO-Based Chemiresistors", Sensors. 20(19), 5602 (2020) doi:10.3390/s20195602
A.V. Vasin, A. V. Rusaysky, E. G. Bortchagovsky, Y.V. Gomeniuk, A.S. Nikolenko, V.V. Strelchuk, R. Yatskiv, S. Tiagulskyi, S. Prucnal, W. Skorupa and A.N. Nazarov, "Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering", Vacuum. 174(Apr), 109199 (2020) doi:10.1016/j.vacuum.2020.109199
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